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Low Temperature SQUID Release Large Device
5mm×5mm chip is divided into two parts of 2.5mm×5mm. On the left is the design of SQA11TES and SQB11TES, and on the right is the design of SQE11TES.Each 2.5mm×5mm design includes 1×4 dc-SQUID current amplifier, TES is connected in series, and the TES bias signal is introduced through the “+R” and “-R” pads.The "+IN“ and ”-IN“ pads are used to connect to the TES detector, and the ”+V“, ”-V“, ”+F“, and ”-F" pads are used for the bias output and feedback of each dc-SQUID current amplifier.
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Parameter Details
Parameter | Numerical value | |||
Chip size | 2.5 mm×5.0 mm | |||
Input Pad Size | 500 μm×475 μm Nb film | |||
SQUID Bias and feedback Pad size | 300 μm×200 μm Nb film | |||
DC-SQUID configuration | First-order gradient/second-order gradient | |||
SQUID Loop inductance | 110 pH | |||
TES bias resistor | 250 μΩ | |||
Heating resistance | 100 Ω | |||
Operating temperature | 0~4.2 K | |||
dc-SQUID Current amplifier (T=4.2K) | ||||
Device name | SQA11TES | SQB11TES | SQE11TES | unit |
Critical current (2Ic) | 18 | 18 | 18 | μA |
Hysteresis resistance (Rn/2) | 2 | 2 | 2 | Ω |
Shielding parameters ql | 1.1 | 1.1 | 1.1 | |
Hysteresis parameters qc | 0.35 | 0.35 | 0.35 | |
Voltage modulation amplitude | 20 | 20 | 20 | |
Flux voltage conversion coefficient V2 | 80 | 80 | 80 | μV/Φ0 |
Feedback mutual inductance (1/Mf) | 9 | 8.5 | 45 | μA/Φ0 |
Input mutual inductance (1/Min ) | 9 | 8.5 | 9.5 | μA/Φ0 |
Tuning inductance (nH) | 30 | 30 | 30 | nH |
Magnetic flux noise ( | 2 | 2 | 2 | μΦ0\√Hz |
Φ0\√Hz) (@1kHz)
